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| Variable Capacitance Diodes MA2SV05 Silicon epitaxial planar type Unit : mm For VCO 0.15 min. 0.15 min. * Good linearity and large capacitance-ratio in CD VR relation * Small series resistance rD * SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.27 - 0.02 0.8 0.1 + 0.05 I Features 1.3 0.1 1.7 0.1 Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating 10 150 -55 to +150 Unit V C C 0.7 0.1 1 : Anode 2 : Cathode SS-Mini Type Package (2-pin) Marking Symbol: 3A I Electrical Characteristics Ta = 25C 3C Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(4V) Capacitance ratio Series resistance* CD(1V)/CD(4V) rD VR = 4 V, f = 470 MHz VR = 5 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz 18.5 3.6 4.7 0.65 Conditions Min Typ Max 10 20.5 4.1 Unit nA pF pF Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0 to 0.1 0.13 - 0.02 + 0.05 I Absolute Maximum Ratings Ta = 25C 0.27 - 0.02 + 0.05 1 |
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